A High Dynamic Range CMOS Readout Chip for Electrochemical Sensors

M. Chen; Y. Liu; Z. Li; J. Xiao; J. Chen

首页> 外文期刊>IEEE sensors journal >A High Dynamic Range CMOS Readout Chip for Electrochemical Sensors

【24h】

A High Dynamic Range CMOS Readout Chip for Electrochemical Sensors

机译：用于电化学传感器的高动态范围CMOS读出芯片

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents a high dynamic range, low-noise CMOS microinstrument chip for electrochemical sensors. It includes a programmable voltage generator, which provides the bias voltage for sensors and a high precision amperometric readout circuit. By using two readout channels, the detection range is boosted into ±1 nA–±1 mA, which is beyond the input range of most sensor readout circuit. This chip could be integrated with various electrochemical sensors to form a lab-on-chip and achieve cost effective, detection of different substances. Implemented in a 0.18- CMOS process, the interface chip maintains a dynamic range of 120 dB with the 3.3 V single power supply. The functionality of the chip is verified by a prototype electrochemical sensor platform composed of this chip and a miniaturized sensor array.

机译：本文提出了一种用于电化学传感器的高动态范围，低噪声CMOS微仪器芯片。它包括一个可编程电压发生器，该电压发生器为传感器提供偏置电压，并提供一个高精度电流表读出电路。通过使用两个读出通道，检测范围提高到±1 nA–±1 mA，这超出了大多数传感器读出电路的输入范围。该芯片可以与各种电化学传感器集成在一起，形成芯片实验室，并实现具有成本效益的不同物质检测。该接口芯片采用0.18- CMOS工艺实现，采用3.3 V单电源供电，可保持120 dB的动态范围。该芯片的功能已通过原型电化学传感器平台验证，该平台由该芯片和小型传感器阵列组成。

著录项

来源
《IEEE sensors journal》 |2016年第10期|3504-3513|共10页
作者
M. Chen; Y. Liu; Z. Li; J. Xiao; J. Chen;
展开▼
作者单位

Communication and Multimedia SoC Laboratory, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Amperometric readout; amperometric readout; complementary metal-oxide semiconductor (CMOS); electrochemical sensors; lab-on-chip (LoC); lab-on-chip (LoC).1;

机译：安培读数;安培读数;互补金属氧化物半导体（CMOS）;电化学传感器;芯片实验室（LoC）;芯片实验室（LoC）.1;

相似文献

外文文献
中文文献
专利

1. A 1 K×1 K high dynamic range CMOS image sensor with on-chipprogrammable region-of-interest readout [J] . Schrey O., Huppertz J., Filimonovic G., IEEE Journal of Solid-State Circuits . 2002,第7期

机译：具有片上可编程关注区域读数的1 K×1 K高动态范围CMOS图像传感器
2. Monolithic CMOS sensor platform featuring an array of 9'216 carbon-nanotube-sensor elements and low-noise, wide-bandwidth and wide-dynamic-range readout circuitry [J] . Dudina Alexandra, Seichepine Florent, Chen Yihui, Sensors and Actuators . 2019,第JANa期

机译：单片CMOS传感器平台，具有9'216碳纳米管传感器元件阵列以及低噪声，宽带和宽动态范围读出电路
3. A Dynamic Range Enhanced Readout Technique with a Two-Step TDC for High Speed Linear CMOS Image Sensors [J] . Congjie Yang, Jiangtao Xu, Kaiming Nie, Sensors . 2015,第11期

机译：具有两步TDC的动态范围增强型读出技术，用于高速线性CMOS图像传感器
4. A 1Kx1K High Dynamic Range CMOS Image Sensor with On-Chip Programmable Region of Interest Readout [C] . O. Schrey, J. Huppertz, G. Filimonovic, 27th European Solid-State Circuits Conference, Sep 18-20, 2001, Villach, Austria . 2001

机译：具有片上可编程感兴趣区域读出的1Kx1K高动态范围CMOS图像传感器
5. Architecture for high dynamic range, high speed image sensor readout circuits. [D] . Kavusi, Sam. 2007

机译：高动态范围，高速图像传感器读出电路的架构。
6. Monolithic CMOS sensor platform featuring an array of 9’216 carbon-nanotube-sensor elements and low-noise wide-bandwidth and wide-dynamic-range readout circuitry [O] . Alexandra Dudina, Florent Seichepine, Yihui Chen, -1

机译：单片CMOS传感器平台具有9216碳纳米管传感器元件阵列以及低噪声宽带和宽动态范围读出电路
7. A Dynamic Range Enhanced Readout Technique with a Two-Step TDC for High Speed Linear CMOS Image Sensors [O] . Zhiyuan Gao, Congjie Yang, Jiangtao Xu, 2015

机译：用于高速线性CmOs图像传感器的具有两步TDC的动态范围增强读出技术

A High Dynamic Range CMOS Readout Chip for Electrochemical Sensors

摘要

著录项

相似文献

相关主题

期刊订阅