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首页> 外文期刊>IEEE sensors journal >A New Simple and Effective Procedure for SiPM Electrical Parameter Extraction
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A New Simple and Effective Procedure for SiPM Electrical Parameter Extraction

机译：SiPM电参数提取的一种新的简单有效的过程

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摘要

Silicon photomultipliers (SiPMs) are emerging semiconductor-based photosensors, addressing the challenge of low-light detection down to the single-photon counting level. A design of high-performance front-end electronics for SiPM readout requires the development of accurate electrical models. Numerous SiPM reliable models have matured in recent years; however, circuit parameter extraction is rather cumbersome and involves extensive measurement steps to be performed. Starting from a recently developed model of the SiPM device coupled to the conditioning electronics, a new effective analytical procedure is, here, devised for extracting the SiPM model parameters from experimental measurements. The proposed extraction technique is applied to a -mm SiPM sensor, and is validated by comparing SPICE simulations and measurement results. Independent cross-check validation based on experimental tests corroborates the effectiveness of the adopted extraction procedure.
机译：硅光电倍增器（SiPM）是新兴的基于半导体的光电传感器，解决了低光检测到单光子计数级别的挑战。用于SiPM读数的高性能前端电子设备的设计需要开发精确的电气模型。近年来，许多SiPM可靠模型已经成熟。但是，电路参数提取相当麻烦，并且需要执行大量的测量步骤。从最近开发的与调节电子设备耦合的SiPM设备模型开始，这里设计了一种新的有效分析程序，用于从实验测量中提取SiPM模型参数。所提出的提取技术应用于-mm SiPM传感器，并通过比较SPICE仿真和测量结果进行了验证。基于实验测试的独立交叉检查验证证实了所采用提取程序的有效性。

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