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首页> 外文期刊>Sensors Journal, IEEE >Ratio-Based Temperature-Sensing Technique Hardened Against Nanometer Process Variations
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Ratio-Based Temperature-Sensing Technique Hardened Against Nanometer Process Variations

机译:基于比率的温度传感技术,可抵抗纳米工艺变化

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摘要

This letter presents a temperature-sensing technique on the basis of the temperature dependency of MOSFET leakage currents. To mitigate the effects of process variation, the ratio of two different leakage current measurements is calculated. Simulations show that this ratio is robust to process spread. The resulting sensor is quite small-0.0016 ${rm mm}^{2}$ including an analog-to-digital conversion—and very energy efficient, consuming less than 640 pJ/conversion. After a two-point calibration, the accuracy in a range of 40$^{circ}{rm C}$–110 $^{circ}{rm C}$ is less than 1.5$^{circ}{rm C}$ , which makes the technique suitable for thermal management applications.
机译:这封信提出了一种基于MOSFET漏电流的温度依赖性的温度传感技术。为了减轻过程变化的影响,计算了两个不同泄漏电流测量值的比率。仿真表明,该比率对过程扩展具有鲁棒性。所得的传感器非常小-0.0016 $ {rm mm} ^ {2} $ ,包括模数转换—且非常节能,每次转换消耗的能量小于640 pJ。经过两点校准后,精度在40 $ ^ {circ} {rm C} $ –110范围内 $ ^ {circ} {rm C} $ 小于1.5 $ ^ {circ} {rm C} $ ,这使该技术适用于热管理应用。

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