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首页> 外文期刊>IEEE sensors journal >A CMOS Sensor for Measurement of Cerebral Optical Coefficients Using Non-Invasive Frequency Domain Near Infrared Spectroscopy
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A CMOS Sensor for Measurement of Cerebral Optical Coefficients Using Non-Invasive Frequency Domain Near Infrared Spectroscopy

机译：用于非侵入性频域近红外光谱法测量脑光学系数的CMOS传感器

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摘要

A heterodyned architecture is integrated with a 180 nm CMOS chip for use in portable frequency domain near infrared spectroscopy (fdNIRS) tools for real time monitoring of tissue oxygenation in the brain. The design and performance measurement results of this chip are summarized in this paper to demonstrate its applicability in multi-distance fdNIRS to measure the absorption and scattering coefficients of tissue. The 2.25 ${rm mm}^{2}$ chip is integrated with four sensor channels, which have a high frequency low noise front end and information processing circuitry to interface with an avalanche photodiode to detect the high speed weak light signal. The four-channel sensor draws 40 mA of current from a 1.8 V power supply and uses an off-chip counter implemented on an FPGA to quantify the amplitude and phase information required for tissue characterization with ${<}{6.5%}$ and ${<}{2.5%}$ linearity error, respectively. An experiment using the multi-distance measurement is used to measure the optical properties of a homogeneous tissue phantom using the CMOS integrated instrument.
机译：异质结构与180 nm CMOS芯片集成在一起，可用于便携式频域近红外光谱（fdNIRS）工具中，以实时监测大脑中的组织氧合。本文总结了该芯片的设计和性能测量结果，以证明其在多距离fdNIRS中测量组织吸收和散射系数的适用性。 2.25 $ {rm mm} ^ {2} $ 芯片集成了四个传感器通道，这些通道具有高频低噪声前端和信息处理电路与雪崩光电二极管连接，以检测高速弱光信号。该四通道传感器从1.8 V电源汲取40 mA电流，并使用在FPGA上实现的片外计数器来量化组织表征所需的幅度和相位信息，其公式为 $ {<} {6.5％} $ 和 $ {<} {2.5％} $ 线性误差。使用多距离测量的实验用于使用CMOS集成仪器测量均匀组织体模的光学特性。

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