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首页> 外文期刊>IEEE sensors journal >Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${rm SiO}_{2}/{rm SU}{-}8$ Membrane
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Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${rm SiO}_{2}/{rm SU}{-}8$ Membrane

机译：具有自支撑$ {rm SiO} _ {2} / {rm SU} {-} 8 $膜的微机械热电堆红外传感器的设计

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In the infrared region of the spectrum thermoelectric detectors such as the thermopile are extensively used. These detectors rely on the well-known Seebeck effect, in which there is a direct conversion of thermoelectric differentials into electrical voltage. The temperature difference over thermocouple junctions is in general, created by forming a thin membrane connected to the silicon bulk. In many existing thermopiles, materials such as Si and ${rm Si}_{3}{rm N}_{4}$ have been used as membrane. These materials suffer from relatively high thermal conductivity, which lowers the membrane temperature and reduces the sensitivity of the detector. A material such as SU-8 2002 has a much lower thermal conductivity and is applied using standard photolithographic processing steps. This work presents thermal simulations regarding the use of SU-8 2002 as a thermal insulating membrane as compared to Si and ${rm Si}_{3}{rm N}_{4}$. The simulation results presented show that the temperature increase in a 5 $mu{rm m}$ ${rm SiO}_{2}/{rm SU}{-}8$ membrane is about 9% higher than in a 1 $mu{rm m}$ ${rm Si}_{3}{rm N}_{4}$ membrane, despite the membrane thickness being increased by a factor of 5. A thermopile consisting of 196 serially interconnected Ti/Ni thermocouples positioned on a 5 $~mu{rm m}$ ${rm SiO}_{2}/{rm SU}{-}8$ 2002 membrane has been fabricated. The sensitivity of the fabricated device has been evaluated in the infrared region, -n-nusing a 1.56 $mu{rm m}$ IR laser and a xenon arc lamp together with a monochromator. The measurement results show a sensitivity of approximately 5 V/W over the wavelength range between 900–2200 nm. Measurements performed in a vacuum chamber show that the sensitivity of the detector could be increased by more than a factor of 3 by mounting the detector in a vacuum sealed capsule.
机译：在光谱的红外区域中，广泛使用热电探测器，例如热电堆。这些检测器依赖于众所周知的塞贝克效应，其中热电差分直接转换为电压。通常，热电偶结上的温差是通过形成连接到硅块的薄膜产生的。在许多现有的热电堆中，已将Si和$ {rm Si} _ {3} {rm N} _ {4} $等材料用作膜。这些材料具有相对较高的热导率，这降低了膜温度并降低了检测器的灵敏度。诸如SU-8 2002之类的材料具有低得多的导热率，并使用标准的光刻工艺步骤进行涂覆。这项工作提供了与使用Si和$ {rm Si} _ {3} {rm N} _ {4} $相比，将SU-8 2002用作隔热膜的热模拟。给出的模拟结果表明，在5 $ mu {rm m} $ $ {rm SiO} _ {2} / {rm SU} {-} 8 $膜中，温度升高比1 $ mu中的温度升高约9％。 {rm m} $ $ {rm Si} _ {3} {rm N} _ {4} $膜，尽管膜厚度增加了5倍。一个热电堆由196个串联的Ti / Ni热电偶组成，位于已经制造了5μm2002μm的膜。已经在红外区域中使用1.56μmIR激光器和氙弧灯以及单色仪对制造的设备的灵敏度进行了评估。测量结果表明，在900-2200 nm之间的波长范围内，灵敏度约为5 V / W。在真空室中进行的测量表明，通过将检测器安装在真空密封的胶囊中，检测器的灵敏度可以提高三倍以上。

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