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首页> 外文期刊>IEEE sensors journal >Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration
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Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration

机译:Aerosol喷射打印WSE2横杆架构设备在Kapton上,具有双功能,可实现灵活的系统集成的电阻存储器和光电传感器

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摘要

We report on a room temperature Aerosol Jet printed two-terminal WSe2 crossbar architecture device on flexible substrate that achieves dual functionality of both a resistive random access memory (ReRAM), as well as a photosensor. As a ReRAM, the silver contacted WSe2 device exhibits forming free, sub 1-V switching voltage, and an on-off ratio of 2 orders. Furthermore, the WSe2 ReRAM exhibits both volatile and non-volatile switching behavior with a transition set current of 2 mu A, translating to a low operating power of 16 mu W. As a photosensor with the same architecture, the transparent CNT electrodes contacted device allows incident light to pass through for photocurrent generation. The two terminals device allows photo sensitivity to be tuned by bias application. In such mode, a maximum photo responsivity of 1 A/W at a visible light wavelength of 660 nm is exhibited by the device at a bias of 1 V, allowing weak light signals to be amplified. In both cases, the WSe2 device retains its functionality even after bending down to a radius of 5 cm. The fabrication process can be up-scaled and has great potential to be used for conformal electronics system integration.
机译:我们在柔性基板上报告了一个室温气溶胶喷射印刷的双端子WSE2横杆架构装置,实现了电阻随机存取存储器(RERAM)的双重功能,以及光电传感器。作为纪录,银接触的WSE2器件表现出自由,亚1-V开关电压,开关比例为2个订单。此外,WSE2 Reram具有2μA的转换设定电流的挥发性和非易失性切换行为,转换为16μW的低操作功率。作为具有相同架构的光电传感器,透明的CNT电极接触装置允许入射光通过光电流发电。两个终端设备允许通过偏差应用调整照片灵敏度。在这种模式中,通过1V的偏置在1V的偏压下显示出660nm的可见光波长的最大照片响应度,允许放大弱光信号。在这两种情况下,即使在向下弯曲到5厘米的半径后,WSE2设备也保持其功能。制造工艺可以升高,并且具有用于保形电子系统集成的很大潜力。

著录项

  • 来源
    《IEEE sensors journal》 |2020年第9期|4653-4659|共7页
  • 作者单位

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    ASTAR Singapore Inst Mfg Technol SIMTech Singapore 138634 Singapore;

    ASTAR Singapore Inst Mfg Technol SIMTech Singapore 138634 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

    Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Aerosol jet; 2D transition metal Dichalcogenides; WSe2; printed electronics; resistive memory; ReRAM; photosensor;

    机译:气溶胶喷射;2D过渡金属二均甲基化物;WSE2;印刷电子;电阻记忆;纪念碑;光电传感器;

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