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首页> 外文期刊>IEEE sensors journal >Design and Analysis of Dual-Metal-Gate Double-Cavity Charge-Plasma-TFET as a Label Free Biosensor
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Design and Analysis of Dual-Metal-Gate Double-Cavity Charge-Plasma-TFET as a Label Free Biosensor

机译:双金属闸门双腔充电 - 血浆TFET的设计与分析,作为一种免费生物传感器

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摘要

In this paper, the bipolar nature of tunnel field effect transistor (TFET) has been utilized for the first time for the identification of biomolecules. C harge plasma concept has been employed to achieve simpler process of fabrication, lower cost and to overcome random dopant fluctuation. The focus of this work is to utilize both ON and ambipolar state of dual metal gate double cavity charge plasma TFET (DMG-DC-CPTFET) biosensor for sensing the biomolecules. Consideration of cavities at both tunneling junctions, it is possible to sense different kinds of biomolecules simultaneously. Gate workfunction engineering has been employed to improve sensitivity and to minimize the OFF state current of the proposed biosensor. High-k gate dielectric is used to achieve maximum ON current. The variation in electrical characteristics like energy band, surface potential and the electric field resulting from the presence of charged and neutral biomolecules in the cavities has been studied. The proposed model offers maximum sensitivity of 2.88 x 10(11) (2.88 x 10(13)%) under ON state and 1.37 x 10(7) (1.37 x 10(9) %) under ambipolar state.
机译:本文首次利用了隧道场效应晶体管(TFET)的双极性,以识别生物分子。 C ramge等离子概念已经采用,实现更简单的制造,较低的成本和克服随机掺杂的波动。这项工作的重点是利用双金属栅极双腔充电等离子体TFET(DMG-DC-CPTFET)生物传感器的双极状态,用于感测生物分子。考虑到隧穿接头的腔体,可以同时感测不同种类的生物分子。浇筑工作障碍工程已经采用了提高敏感性,并最大限度地减少所提出的生物传感器的关闭状态电流。高k栅极电介质用于在电流上实现最大值。研究了电特性的变化,如能量带,表面电位和由腔中的带电和中性生物分子的存在产生的电场。所提出的型号在Ambolar状态下提供2.88×10(11)(2.88×10(13)%)的最大敏感性为2.88×10(11)(2.88×10(13)%)(1.37×10(9)%)。

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