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首页> 外文期刊>IEEE sensors journal >Backside Illuminated “Ge-on-Si” NIR Camera
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Backside Illuminated “Ge-on-Si” NIR Camera

机译：背面照亮“Ge-On-Si”Nir相机

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In this paper, a near-infrared "Ge-on-Si" camera with backside illumination, is presented. The camera consists of a photonic chip, a readout chip, and a commercial microcontroller, which is connected to a laptop via USB. The functionality of two-dimensional (10 x 10 pixels) as well as one-dimensional (64 x 1 pixel) "Ge-on-Si" pixel arrays with a pitch of 25 mu m are demonstrated. The photonic chip consists of basic CMOS technology process in combination with a molecular beam epitaxy growth process. With this technology and the backside illumination a high fill-factor of 74% is achieved. Further the "Ge-on-Si" detectors are operated under zero bias operation in order to minimize the dark current and thus to maximize the signal-to-noise ratio. This enables .1 dark currents better than 100 pA to be achieved in each pixel. A linear behavior between photocurrent and optical power of the "Ge-on-Si" detectors over a large dynamic range for optical powers between 10(-7) W and 10(-2) W is shown. With relatively thin Ge absorption layers of only 400 nm, optical responsivities of 0.36 A/W at a wavelength of 1310 nm could be achieved. The functionality of the "Ge-on-Si" camera is demonstrated by the movement of a single mode fiber over the photonic chip at a wavelength of 1310 nm.
机译：本文介绍了具有背面照明的近红外“GE-ON-SI”相机。相机由光子芯片，读出芯片和商业微控制器组成，该商用微控制器通过USB连接到膝上型计算机。证明了二维（10×10像素）的功能以及一维（64×1像素）“Ge-on-Si”像素阵列，其间距为25μmm。光子芯片由基本CMOS技术过程组合，与分子束外延生长过程组合。利用这种技术和背面照明，实现了高填充因子为74％。此外，“GE-ON-SI”探测器在零偏置操作下操作，以便最小化暗电流，从而最大化信噪比。这使得.1暗电流优于每像素的100Pa才能实现。示出了在10（-7）W和10（-2）W之间的光功率的大动态范围内的“GE-SI”探测器的光电流和光功率之间的线性行为。对于仅400nm的GE吸收层的相对较薄，可以实现波长为0.36A / W的光学响应，可以实现1310nm的波长。通过在1310nm的波长的光子芯片上通过单模光纤的移动来证明“GE-ON-SI”相机的功能。

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