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Behaviour of amorphous silicon solar modules: A parameter study

机译:非晶硅太阳能电池组件的特性:参数研究

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In contrast to crystalline silicon solar modules the parameters of the Ⅰ-Ⅴ-curve cannot directly be extracted by one measured I- V-curve for amorphous solar modules. Especially the parasitical series and shunt resistance are not comparable to the slope in the short circuit respectively to the open circuit region of the Ⅰ-Ⅴ-curve. This work will show the behaviour of the Ⅰ-Ⅴ-curve of aSi:H solar modules and the influence of the single curve parameters. The influence of the separate parameters of aSi:H solar cells is more difficult to understand than for crystalline silicon. So a parameter study shows the influence of the parameters to the Ⅰ-Ⅴ-curve. A recombination current allows a more sufficient description of the recombination paths under illumination. The so called Merten-Model is sufficient to describe the curves behaviour. But to understand the degradation mechanism a more detailed model is needed. Thereto a second diode in the model allows a more exhaustive study of the degradation mechanism, especially the Staebler-Wronski-Eflect.
机译:与晶体硅太阳能电池组件相反,无法通过一个测量的I-V曲线直接提取非晶太阳能电池组件的Ⅰ-Ⅴ曲线参数。特别是寄生串联和分流电阻分别与Ⅰ-Ⅴ型曲线的开路区域的短路斜率不相称。这项工作将显示aSi:H太阳电池组件Ⅰ-Ⅴ曲线的行为以及单曲线参数的影响。与结晶硅相比,aSi:H太阳能电池的各个参数的影响更难以理解。因此,参数研究表明了参数对Ⅰ-Ⅴ曲线的影响。重组电流可以更充分地描述照明下的重组路径。所谓的Merten模型足以描述曲线的行为。但是要了解降解机理,需要更详细的模型。模型中的第二个二极管可以更详尽地研究降解机理,尤其是Staebler-Wronski-Eflect。

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