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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Novel low-voltage low-power full-swing BiCMOS circuits
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Novel low-voltage low-power full-swing BiCMOS circuits

机译：新型低压低功耗全摆幅BiCMOS电路

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摘要

A novel BiCMOS full-swing circuit technique with superior performance over CMOS down to 1.5 V is proposed. A conventional noncomplementary BiCMOS process is used. The proposed pull-up configuration is based on a capacitively coupled feedback circuit. Several pull-down options were examined and compared, and the results are reported. Several cells were implemented using the novel circuit technique; simple buffers, logic gates, and master-slave latches. Their performance, regarding speed, area, and power, was compared to that of CMOS for different technologies and supply voltages. Both device and circuit simulations were used. A design procedure for the feedback circuit and the effects of scaling on that procedure were studied and reported.
机译：提出了一种新颖的BiCMOS全摆幅电路技术，该技术在低至1.5 V的性能上优于CMOS。使用常规的非互补BiCMOS工艺。所提出的上拉配置基于电容耦合反馈电路。检查并比较了几个下拉选项，并报告了结果。使用新颖的电路技术实现了多个单元。简单的缓冲器，逻辑门和主从锁存器。在速度，面积和功率方面，针对不同的技术和电源电压，将它们的性能与CMOS进行了比较。同时使用了器件和电路仿真。研究并报告了反馈电路的设计程序以及缩放对该程序的影响。

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