...
首页> 外文期刊>IEEE Journal of Solid-State Circuits >Design and evaluation of a high-precision, fully tunable OTA-C bandpass filter implemented in GaAs MESFET technology
【24h】

Design and evaluation of a high-precision, fully tunable OTA-C bandpass filter implemented in GaAs MESFET technology

机译:GaAs MESFET技术中实现的高精度,完全可调OTA-C带通滤波器的设计和评估

获取原文
获取原文并翻译 | 示例
           

摘要

A second-order bandpass filter employing the operational transconductance amplifier-capacitor (OTA-C) method and featuring independent tuning of center frequency and Q is described. The filter, which is realized in 0.5-/spl mu/m GaAs MESFET technology, is intended for use in high-precision, continuous-time (CT) IF bandpass filtering applications requiring both accurate amplitude and group delay responses. The filter center frequency is tunable in the range 12-50 MHz, Q is tunable in the range 4-60, and a transfer function accuracy of the order of 1% is achieved throughout the tuning range. Active area is 1 mm/sup 2/ and static power consumption is 230 mW.
机译:描述了采用运算跨导放大器-电容器(OTA-C)方法并且具有中心频率和Q的独立调谐特性的二阶带通滤波器。该滤波器采用0.5- / spl mu / m GaAs MESFET技术实现,旨在用于需要精确幅度和群延迟响应的高精度,连续时间(CT)IF带通滤波应用。滤波器中心频率在12-50 MHz范围内可调,Q在4-60范围内可调,并且在整个调谐范围内传递函数的精度达到1%左右。有效面积为1 mm / sup 2 /,静态功耗为230 mW。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号