A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT

Nakamura M.; Imai Y.

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A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT

机译：使用AlGaAs / GaAs HBT的具有低相位偏差的限幅放大器

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The design and performance of an AlGaAs/GaAs HBT limiting amplifier are presented. It is revealed that the main cause of phase shift deviation in a limiting amplifier is the bias dependence of the input capacitance, which is the dominant nonlinear factor in a transistor. A circuit design featuring a differential configuration with an emitter peaking technique lowers phase deviation and widens the frequency band. The device achieves high-frequency operation of 15 GHz with a low phase shift deviation of 3 degrees over a 15-dB input dynamic range.

机译：介绍了AlGaAs / GaAs HBT限幅放大器的设计和性能。揭示了限幅放大器中相移偏差的主要原因是输入电容的偏置依赖性，这是晶体管中的主要非线性因素。具有差分配置和发射极峰值技术的电路设计可降低相位偏差并扩大频带。该器件可在15dB输入动态范围内实现15GHz的高频工作，并具有3度的低相移偏差。

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来源
《IEEE Journal of Solid-State Circuits》 |1992年第10期|P.1421-1427|共7页
作者
Nakamura M.; Imai Y.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
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专利

1. Low-cost AlGaAs/GaAs HBT multi-gigabit limiting amplifier packagedwith a new plastic air tight cavity encapsulation process [J] . Bongsin Kwark, Dong Sung Ma, Hwachang Seo, IEEE Transactions on Components, Packaging, and Manufacturing Technology. Part B, Advanced Packaging . 1998,第3期

机译：低成本AlGaAs / GaAs HBT千兆位限幅放大器，采用新型塑料气密腔封装工艺
2. Low-cost AlGaAs/GaAs HBT multi-gigabit limiting amplifier packaged with a new plastic air tight cavity encapsulation process [J] . Bongsin Kwark, Dong Sung Ma IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging . 1998,第3期

机译：低成本AlGaAs / GaAs HBT千兆位限幅放大器，采用新型塑料气密腔封装工艺
3. A 10 Gb/s AlGaAs/GaAs HBT high power fully differential limiting distributed amplifier for III-V Mach-Zehnder modulator [J] . Wong T.Y.K., Freundorfer A.P. IEEE Journal of Solid-State Circuits . 1996,第10期

机译：用于III-V Mach-Zehnder调制器的10 Gb / s AlGaAs / GaAs HBT高功率全差分限制分布式放大器
4. A 15-GHz AlGaAs/GaAs HBT limiting amplifier with low phase deviation [C] . Nakamura, M., Imai, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual . 1991

机译：具有低相位偏差的15 GHz AlGaAs / GaAs HBT限幅放大器
5. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions. [D] . Watson, John D. 2015

机译：通过分子束外延生长低无序GaAs / AlGaAs异质结构，以研究二维相关电子相。
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s [O] . Borgarino M., Peroni M., Cetronio A., 2002

机译：AlGaAs / GaAs HBT的低频噪声表征
8. Low-Threshold GaAs/AlGaAs Lasers Grown on Si by Organometallic Vapor Phase Epitaxy [R] . Choi, H. K., Lee, J. W., Salerno, J. P., 1988

机译：通过有机金属气相外延在si上生长的低阈值Gaas / alGaas激光器

A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT

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