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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Internal node probing of a DRAM with a low-temperature e-beam tester
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Internal node probing of a DRAM with a low-temperature e-beam tester

机译：使用低温电子束测试仪探测DRAM的内部节点

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摘要

In order to measure signals on internal nodes of circuits operated at liquid-nitrogen temperature, all electron-beam (e-beam) tester has been modified to cool circuits to this temperature during test. This apparatus has made it possible to measure signals on internal nodes of a high-speed DRAM operated at low temperature. The waveforms, which cannot be measured by other methods, provide the only means of determining the internal operation of the circuit. The instrument is described, and measurements of some critical DRAM signals are presented. In particular, the constancy of the bit-line equalization level, is shown, and observations of the interrelationship between power supply voltage, power bus noise, access time, and temperature are reported.
机译：为了测量在液氮温度下运行的电路内部节点上的信号，已对所有电子束（电子束）测试仪进行了修改，以在测试过程中将电路冷却至该温度。该设备使得可以测量在低温下操作的高速DRAM的内部节点上的信号。无法通过其他方法测量的波形是确定电路内部操作的唯一方法。介绍了该仪器，并介绍了一些关键DRAM信号的测量结果。特别是，显示了位线均衡电平的恒定性，并观察到了电源电压，电源总线噪声，访问时间和温度之间的相互关系。

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