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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A new MOS imager using photodiode as current source
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A new MOS imager using photodiode as current source

机译：使用光电二极管作为电流源的新型MOS成像器

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The author presents a MOS linear image sensor having a high-voltage gain amplifier in photodiode pixels. The only difference between the amplified MOS image (AMI) and this new device is the transfer gate added between the photodiode pixel and the source follower. In this structure, the photoinduced charge loss in video-line parasitic capacitance is compensated to improve the sensitivity. A high-voltage-gain amplifier is used to control the input voltage of the transfer gate so as to maintain an unchanged bias voltage of the photodiode and by operating the photodiode cell as a current source. In this device, the photoinduced charge is not divided by the photodiode capacitance C/sub d/ or the capacitive load C/sub t/. Therefore, it is possible to enlarge the photodiode size, and the sensor has a large saturation exposure as well as a large photocurrent/dark-current ratio of about 30:1. The device operates on a single 5 V power supply. These features make the device suitable for applications in low light levels.
机译：作者提出了一种在光电二极管像素中具有高压增益放大器的MOS线性图像传感器。放大的MOS图像（AMI）与该新设备之间的唯一区别是在光电二极管像素和源极跟随器之间添加了传输门。采用这种结构，可以补偿视频线寄生电容中的光感应电荷损耗，从而提高灵敏度。高压增益放大器用于控制传输门的输入电压，以保持光电二极管的偏置电压不变，并通过将光电二极管单元作为电流源进行操作。在该器件中，光感应电荷不除以光电二极管电容C / sub d /或电容负载C / sub t /。因此，可以增大光电二极管的尺寸，并且传感器具有大的饱和曝光以及大约30：1的大光电流/暗电流比。该设备采用5 V单电源供电。这些功能使该设备适用于弱光环境。

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