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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Integrated Inverse Class-F Silicon Power Amplifiers for High Power Efficiency at Microwave and mm-Wave
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Integrated Inverse Class-F Silicon Power Amplifiers for High Power Efficiency at Microwave and mm-Wave

机译：集成反向F类硅功率放大器，可在微波和毫米波时实现高功率效率

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摘要

This paper presents two 2-stage inverse class-F power amplifiers (PAs) at 24 GHz and 38 GHz, integrated in 0.13 μm SiGe BiCMOS technology. The PAs are composed of an inverse class-F output stage proceeded by a class-AB driving amplifier. An inter-stage matching network between the driver and output stage delivers an optimal inter-stage power to the output stage with a maximum PAE in the driver amplifier. The output stage's load network based on multi-resonance LC resonators terminates harmonic impedance explicitly up to the third of the fundamental signal. By leveraging a native low capacitive reactance, the class-F-1 load network shapes a quasi-rectangular current waveform that effectively contains up to the fifth harmonic spectral component. A high impedance control is limited up to the second harmonic, shaping a half-sinusoid voltage peaking induced by DC, fundamental, and the second harmonic voltage spectra. The 24 GHz PA achieves 50% peak PAE, 16 dBm OP-1dB, 18 dBm Psat, and 19 dB saturated power gain with 2.3 V supply voltage at 24 GHz. The 24 GHz PA can maintain >45% PAE over 23.5-25.5 GHz and 1.5-2.4 V supply voltage range, manifesting a PAE robustness to the frequency and supply variations. For 38 GHz PA, measurements show 38.5% peak PAE, 15 dBm OP-1dB, 17 dBm Psat with 15 dB of saturated power gain at the OP-1dB point when 2.4 V supply voltage is applied. The 38 GHz PA can sustain >35% PAE over 36-39 GHz and 1.5-2.5 V supply variation. The PAs also are tested under the input of band-limited signals modulated by various modulation schemes including 8-PSK, QAM, 16-QAM, 64-QAM, and 128QAM, and test results are presented in this paper. The chip size is 0.95 × 0.6 mm2 for 24 GHz PA and 0.93 × 0.55 mm2 for 38 GHz PA, including all pads.
机译：本文介绍了两个集成在0.13μmSiGe BiCMOS技术中的，在24 GHz和38 GHz处的2级反向F类功率放大器（PA）。功率放大器由反向的F类输出级和AB类驱动放大器组成。驱动器和输出级之间的级间匹配网络通过驱动器放大器中的最大PAE向输出级提供最佳的级间功率。基于多谐振LC谐振器的输出级负载网络可显式终止谐波阻抗，直至基波信号的三分之一。通过利用固有的低电容电抗，F-1类负载网络可对准矩形电流波形进行整形，该波形可有效包含多达五次谐波频谱分量。高阻抗控制仅限于二次谐波，从而形成由直流，基波和二次谐波电压频谱引起的半正弦波电压峰值。 24 GHz PA在24 GHz下具有2.3 V电源电压时可实现50％的峰值PAE，16 dBm OP-1dB，18 dBm Psat和19 dB饱和功率增益。 24 GHz PA在23.5-25.5 GHz和1.5-2.4 V电源电压范围内可以保持> 45％的PAE，表现出PAE对频率和电源变化的鲁棒性。对于38 GHz PA，测量结果显示，当施加2.4 V电源电压时，峰值PAE为38.5％，OP-1dB为15 dBm，Psat为17 dBm，在OP-1dB点具有15 dB的饱和功率增益。 38 GHz PA可以在36-39 GHz和1.5-2.5 V电源变化范围内维持> 35％PAE。还可以在由8-PSK，QAM，16-QAM，64-QAM和128QAM等各种调制方案调制的带宽受限信号的输入下测试PA，并在本文中介绍了测试结果。对于24 GHz PA，芯片尺寸为0.95×0.6 mm2；对于38 GHz PA，包括所有焊盘，芯片尺寸为0.93×0.55 mm2。

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