A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak <inline-formula> <tex-math notation='LaTeX'>$G_{{mathrm{max}}}$ </tex-math></inline-formula>-Core

Park Dae-Woong; Utomo Dzuhri Radityo; Lam Bao Huu; Lee Sang-Gug; Hong Jong-Phil

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A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{mathrm{max}}}$ -Core

机译：基于双峰值的65-nm CMOS中的230-260-GHz宽带和高增益放大器 $ G _ {{ Mathrm {Max}}} $ < / tex-math> -core

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摘要

This paper proposes a wideband and high-gain amplifier design technique based on a dual-peak maximum achievable gain (G(max)) core. The proposed technique achieves a power gain close to G(max) at two frequencies simultaneously, thereby enabling the implementation of a wideband and high-gain amplifier. The input, output, and interstage matching networks are designed in a gain compensating manner, considering the gain variation of the dual-peak G(max)-core. The four-stage amplifier based on an identical dual-peak G(max)-core at each stage is implemented in a 65-nm CMOS process. The measured results show a 3-dB bandwidth of 30 GHz (227.5-257.2 GHz), a gain of 12.4 +/- 1.5 dB, and a peak power added efficiency (PAE) of 1.6% with dc power dissipation of 23.8 mW, which corresponds to the widest 3-dB bandwidth and gain per stage comparable to those of other reported CMOS amplifiers operating at frequencies above 200 GHz.

机译：本文提出了一种基于双峰值最大可实现增益（G（MAX））核心的宽带和高增益放大器设计技术。所提出的技术同时在两个频率下实现接近G（最多）的功率增益，从而能够实现宽带和高增益放大器。输入，输出和级间匹配网络以增益补偿方式设计，考虑到双峰值G（MAX）-core的增益变化。在每个阶段的基于相同的双峰值G（MAX）-Core的四级放大器在65nm CMOS过程中实现。测量结果显示了30GHz的3dB带宽（227.5-257.2GHz），增益为12.4 +/- 1.5 dB，峰值电效率（PAE）为1.6％，直流功耗为23.8 mW，对应于最宽的3-dB带宽和每个阶段的增益与在高于200GHz高于200GHz的频率上操作的其他报告的CMOS放大器的增益。

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来源
《IEEE Journal of Solid-State Circuits》 |2019年第6期|1613-1623|共11页
作者
Park Dae-Woong; Utomo Dzuhri Radityo; Lam Bao Huu; Lee Sang-Gug; Hong Jong-Phil;
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作者单位

Korea Adv Inst Sci & Technol Sch Elect Engn Daejeon 34141 South Korea;

Korea Adv Inst Sci & Technol Sch Elect Engn Daejeon 34141 South Korea;

Korea Adv Inst Sci & Technol Sch Elect Engn Daejeon 34141 South Korea;

Korea Adv Inst Sci & Technol Sch Elect Engn Daejeon 34141 South Korea;

Chungbuk Natl Univ Sch Elect Engn Cheongju 28644 South Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Amplifier; CMOS; dual-peak; gain boosting; maximum achievable gain (G(max)); terahertz (THz); wideband;

机译：放大器;CMOS;双峰;增益升压;最大可实现的增益（G（最多））;太赫兹（THZ）;宽带;

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1. A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{mathrm{max}}}$ -Core [J] . Park Dae-Woong, Utomo Dzuhri Radityo, Lam Bao Huu, IEEE Journal of Solid-State Circuits . 2019,第6期

机译：基于双峰 $ G _ {{ mathrm {max}}的65nm CMOS 230-260GHz宽带高增益放大器} $ -核心
2. A 2.3-mW 26.3-GHz $G_{m}$ -Boosted Differential Colpitts VCO With 20% Tuning Range in 65-nm CMOS [J] . Kashani Milad Haghi, Molavi Reza, Mirabbasi Shahriar IEEE Transactions on Microwave Theory and Techniques . 2019,第4期

机译：2.3mW 26.3GHz $ G_ {m} $ -升压差分Colpitts VCO，调谐范围为20％在65纳米CMOS中
3. A 1-mW Class-AB Amplifier With −101 dB THD+N for High-Fidelity 16 $Omega$ Headphones in 65-nm CMOS [J] . Mehta Nandish, Huijsing Johan H., Stojanovic Vladimir IEEE Journal of Solid-State Circuits . 2019,第4期

机译：具有−101 dB THD + N的1-mW AB类放大器，用于高保真度16 $ Omega $ 65 nm CMOS耳机
4. A 230-260GHz Wideband Amplifier in 65nm CMOS Based on Dual-Peak G_(max)-core [C] . Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Symposium on VLSI Circuits . 2017

机译：基于双峰值G_（MAX）的65nm CMOS中的230-260GHz宽带放大器 - 芯
5. A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3 $sigma$ ) and a Resolution FoM of 0.43 pJ $cdot$ K $^{2}$ in 65-nm CMOS [O] . Woojun Choi, Yongtae Lee, Seonhong Kim, 2018

机译：基于紧凑的电阻式CMOS温度传感器，其不准确为0.12°C（3 $ Sigma $ ）和0.43 pj $ cdot $ k $ ^ {2} $ 65-nm cmos

A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{mathrm{max}}}$ -Core

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