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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 21-dm-OP1 dB 20.3%-Efficiency −131.8-dBm/Hz-Noise X -Band Cartesian Error Feedback Transmitter With Fully Integrated Power Amplifier in 65-nm CMOS
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A 21-dm-OP1 dB 20.3%-Efficiency −131.8-dBm/Hz-Noise X -Band Cartesian Error Feedback Transmitter With Fully Integrated Power Amplifier in 65-nm CMOS

机译:A 21-DM-OP1 DB 20.3%-131.8-DBM / HZ-噪声X架笛卡尔误差反馈发射机,具有65-NM CMOS的完全集成功率放大器

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摘要

This article presents an X-band Cartesian error feedback loop transmitter (CEFLT) with a fully integrated power amplifier (PA) in a 65-nm CMOS. The extra reference path cancels the feedback signal to mitigate the inherent linearity-noise tradeoff in the conventional Cartesian feedback loop transmitter (CFLT). In this way, the nonlinearities from the feedback path are suppressed without using large attenuation, and thus the noise contribution from the feedback path is reduced as well. Compared with the conventional CFLT, the proposed CEFLT can improve the linearity without degrading the noise performance. The PA-included transmitter delivers a maximum power (P-SAT) of 21.4 dBm and output-referred 1-dB compression point (OP1 dB) of 21 dBm, with 33.3% and 30.3% PA output stage efficiency, respectively, and 22.3% and 20.3% system efficiency, respectively. Compared with the open-loop condition, the closed-loop transmitter demonstrates up to 13.6-dB suppression of adjacent channel leakage ratio (ACLR) error vector magnitude (EVM) using 4 Msps 64 quadratic-amplitude modulation (QAM) signals. The out-of-band (OOB) noise at 100 MHz is -133/-131.8 dBm/Hz for the lower and upper sidebands, respectively.
机译:本文介绍了一个X型笛卡尔误差反馈回路变送器(CEFLT),具有65nm CMOS中的完全集成功率放大器(PA)。额外的参考路径取消了反馈信号,以减轻传统的笛卡尔反馈回路变送器(CFLT)中的固有线性噪声权衡。以这种方式,来自反馈路径的非线性在不使用大衰减的情况下抑制,因此也减小了来自反馈路径的噪声贡献。与传统的CFLT相比,所提出的CEFLT可以改善线性度而不会降低噪声性能。 PA附带的发射机可提供21.4 dBm的最大功率(P-SAT)和21 dBm的输出1-DB压缩点(OP1 dB),分别为33.3%和30.3%PA输出级效率,22.3%分别为20.3%的系统效率。与开环条件相比,闭环发射器使用4 MSPS 64二次幅度调制(QAM)信号显示相邻信道泄漏比(ACLR)误差矢量幅度(EVM)最多13.6 dB抑制。带外(OOB)噪声为100 MHz,分别为-133 / -131.8 dBm / hz,用于下部和上部边带。

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