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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Piezoelectric Energy-Harvesting Interface Using Split-Phase Flipping-Capacitor Rectifier With Capacitor Reuse for Input Power Adaptation
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Piezoelectric Energy-Harvesting Interface Using Split-Phase Flipping-Capacitor Rectifier With Capacitor Reuse for Input Power Adaptation

机译：压电能量收集界面采用分体相翻转电容器整流器，电容器重用输入功率适配

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摘要

This article proposes a split-phase flipping-capacitor rectifier (SPFCR) to resolve the hard tradeoff between the number of capacitors and the energy-extraction efficiency for capacitive piezoelectric energy-harvesting (PEH) interfaces. By splitting the capacitor usage into multiple phases, this article can achieve the most number of flipping phases using the same number of capacitors when compared with the state of the art. We also relaxed the implementation complexity by removing insignificant SFPCR flipping phases without sacrificing the energy-harvesting efficiency. To improve further the input power adaptation, the flipping capacitors are reconfigured as a multiple-voltage-conversion-ratio (MVCR) switched-capacitor dc-dc converter during the non-flipping period without using extra passives. Maximum-power-point tracking (MPPT) is also accomplished using the full-bridge rectifier (FBR) fractional open-circuit voltage (V-OC,V-FBR) to relax the voltage-tolerance requirements. Fabricated in 0.18-mu m CMOS, the proposed 21-phase SPFCR PEH interface demonstrates a measured maximum output power improving rate (MOPIR) of up to 9.3x with V-D = 0.12 V (6.5x with V-D = 0 V) when compared with the conventional FBR interface over an equivalent FBR input power range (P-in,P- FBR) from 0.15 to 5.57 mu W.
机译：本文提出了分型翻转电容器整流器（SPFCR），以解决电容器数量和电容式压电能量收集（PEH）接口的电容器数量与能量提取效率之间的硬折差。通过将电容器用法分成多个阶段，本文可以在与现有技术相比时使用相同数量的电容器来达到最多数量的翻转相。我们还通过去除无关头的SFPCR翻转阶段来放松实现的复杂性而不牺牲能量收获效率。为了进一步改善输入功率适应，在非翻转时段期间，翻转电容器被重新配置为多电压转换 - 比（MVCR）开关 - 电容器DC-DC-DC-DC-DC-DC转换器，而不使用额外的无线。还使用全桥整流器（FBR）分数开路电压（V-OC，V-FBR）来完成最大功率点跟踪（MPPT），以放宽电压耐受要求。在0.18-mu M CMOS中制造，所提出的21相SPFCR PEH界面在与...相比时，所提升的21阶段SPFCR PEH界面具有高达9.3倍的最大输出功率提高率（MOPIR）高达9.3倍（6.5倍，VD = 0 V）常规FBR界面在等效的FBR输入功率范围（P-IN，P-FBR），从0.15到5.57 mu W.

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