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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation
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A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation

机译：利用噪声和失真消除的高度线性宽带CMOS LNA

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摘要

A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA ${hbox{IIP}}_3$ is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 $mu$m CMOS technology, this LNA achieved ${+}$16 dBm ${hbox{IIP}}_3$ in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1 GHz while drawing 11.6 mA from 1.5 V supply voltage.
机译：提出了一种利用同时消除噪声和失真的宽带无电感器低噪声放大器（LNA）设计。通过共栅和共源级联，可以同时消除各个阶段的固有三阶失真。然后，LNA $ {hbox {IIP}} _ 3 $受到公共源极和公共栅极级之间的二阶相互作用的限制，这在所有级联放大器中都是常见的。通过在公共栅极级中引入无二阶失真的电路技术，可以进一步消除这种三阶失真。该LNA采用0.13 µm CMOS技术实现，在900 MHz和2 GHz频段均达到了$ {+} $ 16 dBm $ {hbox {IIP}} _ 3 $。测量表明，LNA的最小内部增益为14.5 dB，在800 MHz至2.1 GHz范围内的噪声系数为2.6 dB，而从1.5 V电源电压汲取11.6 mA。

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