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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier
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A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier

机译:0.13 / spl mu / m CMOS前端,用于带多频带正反馈低噪声放大器的DCS1800 / UMTS / 802.11b-g

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摘要

This paper presents a fully integrated CMOS receiver front-end based on a direct conversion architecture for UMTS/802.11b-g and a low-IF architecture at 100 kHz for DCS1800. The two key building blocks are a multiband low-noise amplifier (LNA) that uses positive feedback to improve its gain and a highly linear mixer. The front-end, integrated in a 0.13 /spl mu/m CMOS process, exhibits a minimum noise figure of 5.2 dB, a programmable gain that can be varied from 13.5 to 28.5 dB, an IIP3 of more than -7.5 dBm and an IIP2 better than 50 dBm. The total current consumption is 20mA from a 1.2V supply.
机译:本文介绍了一种基于UMTS / 802.11b-g的直接转换架构和100kHz的DCS1800的低中频架构的完全集成CMOS接收机前端。这两个关键模块是使用正反馈来改善其增益的多频带低噪声放大器(LNA)和高度线性的混频器。集成在0.13 / spl mu / m CMOS工艺中的前端,具有5.2 dB的最小噪声系数,可在13.5至28.5 dB之间变化的可编程增益,大于-7.5 dBm的IIP3和IIP2优于50 dBm。 1.2V电源的总电流消耗为20mA。

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