Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

Chen K.J.; Guofu Niu

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Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

机译：基于串联负负差分电阻器件的受控猝灭的可编程逻辑门的逻辑综合和电路建模

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摘要

The circuit concept of programmable logic gates based on the controlled quenching of series-connected negative differential resistance (NDR) devices is introduced, along with the detailed logic synthesis and circuit modeling. At the rising edge of a clocked supply voltage, the NDR devices are quenched in the ascending order of peak currents that can be reordered by the control gates and input gates biases, thus, providing programmable logic functions. The simulated results agree well with the experimental demonstration of the programmable logic gate fabricated by a monolithic integrated resonant tunneling diode/high electron mobility transistor technology.

机译：介绍了基于串联负负差分电阻（NDR）器件受控淬火的可编程逻辑门的电路概念，以及详细的逻辑综合和电路建模。在时钟电源电压的上升沿，NDR器件以峰值电流的升序淬火，可以通过控制门和输入门偏置对其进行重新排序，从而提供可编程逻辑功能。仿真结果与单片集成谐振隧道二极管/高电子迁移率晶体管技术制造的可编程逻辑门的实验演示非常吻合。

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来源
《IEEE Journal of Solid-State Circuits》 |2003年第2期|p.312-318|共7页
作者
Chen K.J.; Guofu Niu;
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作者单位

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
programmable logic devices; programmable circuits; logic gates; resonant tunnelling diodes; high electron mobility transistors; logic design; negative resistance circuits; programmable logic gates; controlled quenching; negative differential resistan;

机译：可编程逻辑器件;可编程电路;逻辑门谐振隧道二极管;高电子迁移率晶体管;逻辑设计;负电阻电路;可编程逻辑门控制淬火;负微分电阻;

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专利

1. Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices [J] . Chen K.J., Guofu Niu IEEE Journal of Solid-State Circuits . 2003,第2期

机译：基于串联负负差分电阻器件的受控猝灭的可编程逻辑门的逻辑综合和电路建模
2. An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices [J] . Chen K.J., Waho T. IEEE Electron Device Letters . 1996,第6期

机译：基于串联负负差分电阻器件的受控淬火的异或逻辑电路
3. Multiple-Valued Logic Circuits Design using Negative Differential Resistance Devices [J] . Krzysztof S. Berezowski, Sarma B. K. Vrudhula Journal of multiple-valued logic and soft computing . 2007,第4a6期

机译：使用负差分电阻器件的多值逻辑电路设计
4. Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices [C] . Niu, G.F., Chen, . 1997

机译：基于串联负负差分电阻器件的受控熄灭的可编程逻辑门电路建模
5. NEGATIVE DIFFERENTIAL RESISTANCE IN TRANSISTOR CIRCUITS (NONLINEAR, DEVICES, COMPOUND, SCR MODELING, RESISTIVE MULTIPORTS). [D] . TRAJKOVIC, LJILJANA. 1986

机译：晶体管电路中的负微分电阻（非线性，器件，化合物，SCR建模，电阻多端口）。
6. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic [O] . Jaewoo Shim, Seyong Oh, Dong-Ho Kang, -1

机译：磷/二硫化hen异质结负值多值逻辑器件
7. Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units [O] . Zhang, T., Guerin, D., Alibart, F., 2017

机译：负差分电阻，存储器和可重构逻辑基于金纳米粒子的单层器件的功能用可电聚合的噻吩-EDOT单元功能化

Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

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