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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
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Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology

机译：完全集成在SiGe双极生产技术中的毫米波VCO，具有宽调谐范围和低相位噪声

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摘要

Millimeter-wave voltage-controlled oscillators (VCOs) are presented which are fully integrated in a SiGe bipolar production technology. The low-cost differential circuits have been designed and optimized for low phase noise and wide tuning range. As an example, by varying the bias voltage of the on-chip varactor, the oscillation frequency can be changed from 36 to 46.9 GHz (i.e., by 26%). In this wide frequency range, phase noise between -107 and -110dBc/Hz at 1-MHz offset frequency and single-ended voltage swing of about 0.95V/sub pp/ /spl plusmn/10% (differential: 1.9V/sub pp/) were measured. The circuit consumes 280mW at -5.5-V supply voltage. The high oscillation frequency and low phase noise at wide tuning range are record values for fully integrated oscillators in Si-based technologies. The basic oscillator was then extended by a cascode stage as an output buffer. Now the VCO performance is no longer degraded if nonperfectly terminated transmission lines are driven. Thus, the chip can be mounted in a low-cost socket; however, at the cost of increased phase noise and power consumption.
机译：提出了完全集成在SiGe双极生产技术中的毫米波压控振荡器（VCO）。低成本差分电路已针对低相位噪声和宽调谐范围进行了设计和优化。例如，通过改变片上变容二极管的偏置电压，可以将振荡频率从36GHz改变到46.9GHz（即，改变26％）。在此宽频率范围内，在1-MHz偏移频率和-0.95％V / sub pp / / spl plusmn / 10％（差分：1.9V / sub pp）的单端电压摆幅下，-107至-110dBc / Hz之间的相位噪声/）。该电路在-5.5V电源电压下消耗280mW。在基于硅的技术中，高振荡频率和低相位噪声（宽调谐范围）是完全集成振荡器的记录值。然后，基本振荡器通过共源共栅级扩展为输出缓冲器。现在，如果驱动非完美端接的传输线，则VCO性能不再降低。因此，可以将芯片安装在低成本插座中。然而，这是以增加相位噪声和功耗为代价的。

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