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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18-/spl mu/m CMOS
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A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18-/spl mu/m CMOS

机译:适用于0.18- / spl mu / m CMOS的5 GHz无线局域网的1-V变压器反馈低噪声放大器

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摘要

A low-noise amplifier (LNA) uses low-loss monolithic transformer feedback to neutralize the gate-drain overlap capacitance of a field-effect transistor (FET). A differential implementation in 0.18-/spl mu/m CMOS technology, designed for 5-GHz wireless local-area networks (LANs), achieves a measured power gain of 14.2 dB, noise figure (NF, 50 /spl Omega/) of 0.9 dB, and third-order input intercept point (IIP3) of +0.9 dBm at 5.75 GHz, while consuming 16 mW from a 1-V supply. The feedback design is benchmarked to a 5.75-GHz cascode LNA fabricated in the same technology that realizes 14.1-dB gain, 1.8-dB NF, and IIP3 of +4.2 dBm, while dissipating 21.6 mW at 1.8 V.
机译:低噪声放大器(LNA)使用低损耗单片变压器反馈来中和场效应晶体管(FET)的栅漏重叠电容。采用0.18- / spl mu / m CMOS技术的差分实现方案,专为5 GHz无线局域网(LAN)设计,可实现14.2 dB的测量功率增益,噪声系数(NF,50 / spl Omega /)为0.9 dB和5.75 GHz时+0.9 dBm的三阶输入截取点(IIP3),而来自1-V电源的功耗为16 mW。该反馈设计以采用相同技术制造的5.75 GHz级联LNA为基准,该技术可实现14.1 dB增益,1.8 dB NF和+4.2 dBm的IIP3,同时在1.8 V时耗散21.6 mW。

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