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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers
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A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

机译:用于接触式/非接触式智能卡微控制器的128kb FeRAM宏

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This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-/spl mu/m three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10/sup 8/ write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.
机译:本文介绍了用于智能卡微控制器的128kb FeRAM宏。该宏是使用0.35- / splμm/ m的三金属CMOS和金属电容/通过叠层插入式电容器(CMVP)处理技术设计和制造的,非常适合诸如Smart等最新的系统LSI。卡微控制器。它具有从32到128 kb的灵活存储器大小,0.3 mA的低消耗电流以及在2.7到5.5 V的宽范围电源电压下的持久性超过10 / sup 8 /写/读周期。通过使用四种最新开发的电路技术,不仅实现了接触型智能卡微控制器还需要非接触型微控制器的特性:1)三金属CMVP存储单元; 2)电压调节架构; 3)主/副位线和字线结构; 4)动态型失调检测放大器。

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