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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 0.5-8.5 GHz fully differential CMOS distributed amplifier
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A 0.5-8.5 GHz fully differential CMOS distributed amplifier

机译:0.5-8.5 GHz全差分CMOS分布式放大器

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摘要

A fully integrated fully differential distributed amplifier with 5.5 dB pass-band gain and 8.5 GHz unity-gain bandwidth is described. The fully differential CMOS circuit topology yields wider bandwidth than its single-ended counterpart, by eliminating the source degeneration effects of parasitic interconnect, bond wire, and package inductors. A simulated annealing CAD tool underpins the parasitic-aware methodology used to optimize the design including all on-chip active and passive device and off-chip package parasitics. Mixed-mode S-parameter measurement techniques used for fully differential circuit testing are reviewed. Integrated in 1.3×2.2 mm2 in a standard 0.6 Μm CMOS process, the distributed amplifier dissipates 216 mW from a single 3 V supply.
机译:描述了具有5.5 dB通带增益和8.5 GHz单位增益带宽的全集成全差分分布式放大器。通过消除寄生互连,键合线和封装电感的源极退化效应,全差分CMOS电路拓扑产生的带宽比其单端CMOS拓扑宽。一个模拟的退火CAD工具为用于优化设计的寄生感知方法奠定了基础,该方法包括所有片上有源和无源器件以及片外封装寄生效应。综述了用于完全差分电路测试的混合模式S参数测量技术。分布式放大器以标准的0.6 Mm CMOS工艺集成在1.3×2.2 mm2中,从单个3 V电源消耗216 mW的功率。

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