A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

Rickelt M.; Rein H.-M.

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A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

机译：用于模拟硅双极电路中雪崩击穿效应的新型晶体管模型

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A physics-based scalable transistor model is described which allows accurate consideration of avalanche-breakdown effects in bipolar circuit simulation. The three-dimensional model consists of six lumped transistor elements, which are connected via elements of the base and emitter-contact resistance. Analytical relations are given to calculate the elements of this six-transistor model (6TM) for arbitrary emitter dimensions from measured area- and length-specific transistor parameters. As a core of the transistor elements, all kinds of conventional transistor models can be used provided an adequate avalanche current source is implemented between the internal collector and base nodes. The validity of this 6TM has been verified under dc and fast transient conditions by simulations and measurements.

机译：描述了基于物理的可伸缩晶体管模型，该模型允许在双极电路仿真中准确考虑雪崩击穿效应。三维模型由六个集总晶体管元件组成，它们通过基极和发射极接触电阻元件连接。给出了分析关系，以便根据所测量的面积和长度特定的晶体管参数，针对任意发射极尺寸来计算此六晶体管模型（6TM）的元素。作为晶体管元件的核心，可以在内部集电极和基极节点之间实现足够的雪崩电流源的情况下，使用所有常规晶体管模型。通过仿真和测量，已经在直流和快速瞬态条件下验证了该6TM的有效性。

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来源
《IEEE Journal of Solid-State Circuits》 |2002年第9期|p.1184-1197|共14页
作者
Rickelt M.; Rein H.-M.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
关键词
avalanche breakdown; bipolar integrated circuits; bipolar transistors; circuit simulation; impact ionisation; integrated circuit modelling; semiconductor device breakdown; semiconductor device models; transient response; Si; Si bipolar circuits; area-specific trans;

机译：雪崩击穿;双极集成电路;双极晶体管;电路仿真;碰撞电离;集成电路建模;半导体器件击穿;半导体器件模型;瞬态响应;Si;Si双极电路;区域特定的跨;

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1. A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits [J] . Rickelt M., Rein H.-M. IEEE Journal of Solid-State Circuits . 2002,第9期

机译：用于模拟硅双极电路中雪崩击穿效应的新型晶体管模型
2. Modeling of Ge-Si heterojunction bipolar transistors for use in silicon monolithic millimeter-wave integrated circuits [J] . Campbell S.A., Gopinath A. IEEE Transactions on Microwave Theory and Techniques . 1989,第12期

机译：硅单片毫米波集成电路中使用的Ge-Si异质结双极晶体管的建模
3. DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region [J] . Yang-Hua Chang, Zong-Tai Cheng Solid-State Electronics . 2011,第1期

机译：InGaAsSb异质结双极晶体管等效电路模型的直流参数提取，包括基极区域中的非理想效应
4. An accurate transistor model for simulating avalanche-breakdown effects in Si bipolar circuits [C] . Rickelt, M., Rein, . 2001

机译：用于模拟Si双极电路中雪崩击穿效应的精确晶体管模型
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

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6. Open Source Brain: A Collaborative Resource for Visualizing Analyzing Simulating and Developing Standardized Models of Neurons and Circuits [O] . Padraig Gleeson, Matteo Cantarelli, Boris Marin, -1

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8. Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design. [R] . Kennedy, E. J., Alley, G. T., Britton, C. L., 1990

机译：与ssC电路设计相关的辐射对结型场效应晶体管（JFETs），mOsFET和双极晶体管的影响。

A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

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