...
首页> 外文期刊>IEEE Journal of Solid-State Circuits >Switched-current circuits in digital CMOS technology with low charge-injection errors
【24h】

Switched-current circuits in digital CMOS technology with low charge-injection errors

机译:具有低电荷注入误差的数字CMOS技术中的开关电流电路

获取原文
获取原文并翻译 | 示例
           

摘要

In this paper, digital CMOS switched-current (SI) circuits with low charge-injection errors are presented. These circuits are based on the operation of the switches at virtual-ground nodes to result in signal-independent charge injection. Based on this scheme, different topologies for the memory cell are discussed. To verify the theoretical concepts developed, a third-order elliptic low-pass SI filter is implemented in a 0.25-/spl mu/m digital CMOS process. The filter nominally operates with a clock frequency of 10 MHz, cutoff frequency of 1 MHz, and a power supply of 2.3 V, while consuming 29 mW of power and processing input signals as large as 600-/spl mu/A peak differential. The low-charge injection nature of the circuit is reflected in its low total harmonic distortion of -59 dB for a 0.3-MHz signal with a modulation index of 0.5.
机译:本文提出了具有低电荷注入误差的数字CMOS开关电流(SI)电路。这些电路基于虚拟接地节点上的开关操作,以产生与信号无关的电荷注入。基于该方案,讨论了存储单元的不同拓扑。为了验证所开发的理论概念,在0.25- / spl mu / m数字CMOS工艺中实现了三阶椭圆低通SI滤波器。该滤波器通常以10 MHz的时钟频率,1 MHz的截止频率和2.3 V的电源工作,同时消耗29 mW的功率并处理高达600- / spl mu / A的峰值差分输入信号。该电路的低电荷注入特性体现在它对0.3 MHz信号,调制指数为0.5的低总谐波失真-59 dB的反映。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号