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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A simple subcircuit extension of the BSIM3v3 model for CMOS RFdesign
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A simple subcircuit extension of the BSIM3v3 model for CMOS RFdesign

机译:BSIM3v3模型的一个简单子电路扩展,用于CMOS RF设计

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摘要

An accurate and simple lumped-element extension of the BSIM3v3nMOSFET model for small-signal radio-frequency circuit simulation isnproposed and investigated. Detailed comparisons of the small-signal ynand s parameters with both two-dimensional device simulations andnmeasurement data are presented. A procedure is developed to extract thenvalues of two lumped resistors-the only added elements. Thennon-quasi-static and substrate effects can be modeled with these twonresistors to significantly improve the model accuracy up to a frequencynof 10 GHz, which is about 70% of the fT of the 0.5 Μm NMOSntransistor
机译:提出并研究了用于小信号射频电路仿真的BSIM3v3nMOSFET模型的准确,简单的集总元素扩展。给出了小信号的ynand s参数与二维设备仿真和测量数据的详细比较。开发了一种程序来提取两个集总电阻的值,这是唯一添加的元素。然后,可以使用这两个电阻对非准静态和衬底效应进行建模,以显着提高高达10 GHz频率的模型精度,这大约是0.5μmNMOSn晶体管的fT的70%

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