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首页> 外文期刊>IEEE Journal of Solid-State Circuits >High-frequency analysis of linearity improvement technique ofcommon-emitter transconductance stage using a low-frequency-trap network
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High-frequency analysis of linearity improvement technique ofcommon-emitter transconductance stage using a low-frequency-trap network

机译:低频陷波网络高频分析共射极跨导级的线性度改进技术

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摘要

It is well known that a low-frequency-trap network can be added tonthe base of an inductively-degenerated common-emitter transconductancenstage to improve its third-order intercept point, but not its 1-dBncompression point. High-frequency equations in Volterra series are usednto explain this phenomenon. Analytical and experimental results shownthat the third-order intercept point increases with the capacitancenwithin the low-frequency-trap network
机译:众所周知,可以在感应退化的共发射极跨导的基础上增加一个低频陷波网络,以改善其三阶截点,而不是其1-dBn压缩点。 Volterra级数中的高频方程被用来解释这种现象。分析和实验结果表明,低频陷波网络中三阶交调点随电容n的增加而增大。

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