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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Performance and reliability comparison between asymmetric andsymmetric LDD devices and logic gates
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Performance and reliability comparison between asymmetric andsymmetric LDD devices and logic gates

机译：非对称和非对称LDD器件与逻辑门之间的性能和可靠性比较

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摘要

The performance and reliability of NMOSFET asymmetric lightlyndoped drain (LDD) devices (with no LDD on the source side) are comparednwith those of conventional LDD devices. At a fixed Vdd,nasymmetric LDD devices exhibit higher Idsat and shorternhot-carrier lifetime. To maintain the same hot-carrier lifetime,nasymmetric LDD devices must operate at lower Vdd while highernIdsat is retained. For the same hot-carrier lifetime, ringnoscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% ifnPMOSFET also had asymmetric LDD) higher speed and 10% lower power. Thenhot-carrier reliability of inverter, NAND, and NOR structures withnasymmetric and conventional LDD devices is also simulated and compared
机译：比较了NMOSFET非对称轻型漏极（LDD）器件（源侧无LDD）的性能和可靠性，并与常规LDD器件进行了比较。在固定的Vdd下，非对称LDD器件具有更高的Idsat和更短的热载流子寿命。为了保持相同的热载流子寿命，非对称LDD设备必须在较低的Vdd上运行，而保留较高的nIdsat。对于相同的热载流子寿命，具有NMOSFET非对称LDD器件的环形振荡器可以实现5％的速度（如果nPMOSFET也具有非对称LDD的器件，则为10％）和更低的功率。然后，还模拟并比较了具有不对称和常规LDD器件的逆变器，NAND和NOR结构的热载流子可靠性。

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