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首页> 外文期刊>IEEE Journal of Solid-State Circuits >GSM transceiver front-end circuits in 0.25-Μm CMOS
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GSM transceiver front-end circuits in 0.25-Μm CMOS

机译：0.25μmCMOS中的GSM收发器前端电路

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摘要

So far, CMOS has been shown to be capable of operating atnradio-frequency (RF) frequencies, although the inadequacies of thendevice-level performance often have to be circumvented by innovations atnthe architectural level that tend to shift the burden to the circuitnbuilding blocks at lower frequencies, The RF front-end circuitsnpresented in this paper show that excellent RF performance is feasiblenwith 0.25-Μm CMOS, even in terms of the requirements of thentried-and-true superheterodyne architecture. Design for low-noise andnlow-current consumption targeted for GSM handsets has been givennparticular attention in this paper. Low-noise amplifiers with sub-2-dBnnoise figures (NFs) and a double balanced mixer with 12.6 dBnsingle-sideband NF, as well as sub-25-mA current consumption for the RFnfront end (complete receiver), are among the main achievements
机译：到目前为止，CMOS已被证明能够在射频（RF）频率下工作，尽管器件级性能的不足之处通常必须通过体系结构级的创新来避免，这些创新往往会将负担转移到较低层的电路构建块上。在本文中提出的RF前端电路表明，即使在经过验证的和真正的超外差架构的要求方面，采用0.25-μmCMOS也可以实现出色的RF性能。本文特别关注了针对GSM手机的低噪声，低电流消耗的设计。主要成就包括具有亚2 dB噪声系数（NFs）的低噪声放大器和具有12.6 dBn单边带NF的双平衡混频器以及RFnfront端（完整接收器）的亚25 mA电流消耗。

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