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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A fully integrated, untrimmed CMOS instrumentation amplifier withsubmicrovolt offset
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A fully integrated, untrimmed CMOS instrumentation amplifier withsubmicrovolt offset

机译:具有亚微伏级失调的完全集成,未修整的CMOS仪表放大器

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摘要

A low-noise CMOS instrumentation amplifier intended fornlow-frequency thermoelectric microsensor applications is presented thatnachieves submicrovolt offset and noise. Key to its performance is thenchopper modulation technique combined with a bandpass filter and anmatching on-chip oscillator. No external components or trimming arenrequired. The achievable offset performance depends on the bandpassnfilter Q and the oscillator-to-bandpass filter matching accuracy.nConstraints are derived for an optimum Q and a given matching accuracy.nThe improvement of common-mode rejection ratio (CMRR) in choppernamplifiers is discussed. The amplifier features a total gain ofn77±0.3 dB and a bandwidth of approximately 600 Hz. The measurednlow-frequency input noise is 8.5 nV/√Hz and the input offset isn600 nV. The measured low-frequency CMRR is better than 150 dB. Thencircuit has been implemented in a standard 1-Μm single-poly CMOSnprocess
机译:提出了一种适用于低频热电微传感器应用的低噪声CMOS仪表放大器,可实现亚微伏级的失调和噪声。斩波调制技术结合了带通滤波器和匹配的片上振荡器,是其性能的关键。无需外部组件或修整。可获得的失调性能取决于带通滤波器Q和振荡器至带通滤波器的匹配精度。n得出了最佳Q和给定匹配精度的约束条件。n讨论了斩波放大器中共模抑制比(CMRR)的改进。该放大器的总增益为n77±0.3 dB,带宽约为600 Hz。测得的低频输入噪声为8.5 nV /√Hz,输入失调为600 nV。测得的低频CMRR优于150 dB。那么电路已经在标准的1μm单多晶硅CMOSn工艺中实现

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