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CMOS technology characterization for analog and RF design

机译:用于模拟和RF设计的CMOS技术特性

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摘要

The design of analog and radio-frequency (RF) circuits in CMOSntechnology becomes increasingly more difficult as device modeling facesnnew challenges in deep submicrometer processes and emerging circuitnapplications. The sophisticated set of characteristics used to representntoday's “digital” technologies often proves inadequate fornanalog and RF design, mandating many additional measurements andniterations to arrive at an acceptable solution. This paper describes anset of characterization vehicles that can be employed to quantify thenanalog behaviour of active and passive devices in CMOS processes, innparticular, properties that are not modeled accurately by SPICEnparameters. Test structures and circuits are introduced for measuringnspeed, noise, linearity, loss, matching, and dc characteristics
机译:随着器件建模面临深亚微米工艺和新兴电路应用的新挑战,CMOSn技术中的模拟和射频(RF)电路设计变得越来越困难。用来代表当今“数字”技术的一系列复杂特性经常被证明不足以用于模拟和RF设计,从而要求进行许多其他的测量和整合,以获得可接受的解决方案。本文描述了一组表征工具,可用于量化CMOS工艺中有源和无源器件的模拟行为,尤其是无法通过SPICEn参数准确建模的特性。介绍了用于测量速度,噪声,线性,损耗,匹配和直流特性的测试结构和电路

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