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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology
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Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology

机译：绝缘体上GaAs MESFET技术获得的超高效率

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摘要

Significant results of measurement and calculation of power-added efficiency (PAE) and drain efficiency are presented for MESFET's that use GaAs-on-insulator. Ultrahigh PAE of 89% was obtained at 8 GHz with a gain of 9.6 dB using a 3-V supply. When the voltage was increased to 4 V, the peak PAE was 93% at 210 mW/mm with 9.2-dB gain. The ideal current-voltage characteristics with practically zero leakage current and large transconductance near pinchoff yielded PAE values approaching the theoretical limits of overdriven operation. The application of conventional assumptions concerning drain efficiency is discussed relative to devices that approach these theoretical limits. Also discussed are the pitfalls of various figures of merit of efficiency when applied to these devices. Hence, there are two types of technical barriers associated with very-high-efficiency devices: the physical realization and their characterization.
机译：对于使用绝缘体上砷化镓的MESFET，提出了测量和计算功率附加效率（PAE）和漏极效率的重要结果。使用3V电源在8 GHz时可获得89％的超高PAE，增益为9.6 dB。当电压增加到4 V时，峰值PAE在210 mW / mm时为93％，增益为9.2dB。理想的电流-电压特性，几乎为零泄漏电流，并且在夹断状态附近具有较大的跨导，所产生的PAE值接近过驱动操作的理论极限。相对于接近这些理论极限的器件，讨论了有关漏极效率的常规假设的应用。还讨论了将各种效率指标应用到这些设备时的陷阱。因此，与非常高效率的设备相关的技术障碍有两种：物理实现及其表征。

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