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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.6-GByte/s DRAM with flexible mapping redundancy technique and additional refresh scheme
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A 1.6-GByte/s DRAM with flexible mapping redundancy technique and additional refresh scheme

机译:具有灵活映射冗余技术和附加刷新方案的1.6 GB / s DRAM

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摘要

We implemented 72-Mb direct Rambus DRAM with new memory architecture suitable for multibank. There are two novel schemes: flexible mapping redundancy (FMR) technique and additional refresh scheme. This paper shows that multibank reduces redundancy area efficiency. But with the FMR technique, this 16-bank DRAM realizes the same area efficiency as a single-bank DRAM. In other words, FMR reduces chip area by 13%. This paper also describes that additional refresh scheme reduces data retention power to 1/4. Its area efficiency is about four times better than that of the conventional redundancy approach.
机译:我们采用适用于多存储区的新存储器架构实现了72 Mb直接Rambus DRAM。有两种新颖的方案:灵活映射冗余(FMR)技术和其他刷新方案。本文表明,多库会降低冗余区域的效率。但是,通过FMR技术,该16排DRAM可实现与单排DRAM相同的面积效率。换句话说,FMR将芯片面积减少了13%。本文还描述了其他刷新方案可将数据保留能力降低到1/4。它的面积效率大约是传统冗余方法的四倍。

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