...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Journal of Solid-State Circuits >Program load adaptive voltage generator for flash memories
【24h】

Program load adaptive voltage generator for flash memories

机译：程序负载自适应电压发生器，用于闪存

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper describes a program load voltage generator for flash memories. It is based on an adaptive feedback loop which senses the current delivered to the memory cells during programming and adjusts the output voltage accordingly to compensate for the voltage drop caused by the programming current across the bit-line select transistors. The proposed circuit (silicon area=0.065 mm/sup 2/) was integrated in a 0.8-/spl mu/m CMOS 4 Mb flash memory device (0.6 /spl mu/m in the matrix). Experimental evaluations showed that very effective compensation is achieved, with bit-line voltage kept at the desired value during the whole programming operation. A spread as small as 70 mV was measured between the single-bit and 16-b programming cases.
机译：本文介绍了用于闪存的程序负载电压发生器。它基于自适应反馈环路，该环路在编程期间感测传送到存储单元的电流，并相应地调整输出电压，以补偿位线选择晶体管两端的编程电流引起的电压降。拟议的电路（硅面积= 0.065 mm / sup 2 /）集成在0.8- / splμm/ m CMOS 4 Mb闪存器件（矩阵中为0.6 / splμm/ m）中。实验评估表明，在整个编程操作期间，位线电压保持在所需值，可以实现非常有效的补偿。在单位编程和16b编程情况下测得的展宽小至70 mV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号