...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Journal of Solid-State Circuits >A novel power-off mode for a battery-backup DRAM
【24h】

A novel power-off mode for a battery-backup DRAM

机译：电池备用DRAM的新型断电模式

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper proposes a new DRAM power-off mode, in which the power source is completely shut off during the standby cycle, resulting in a zero standby leakage current. By introducing a new word-line power-off/on sequence and a grounded cell plate technique, all cell data are maintained after power source is turned off and on. Although the proposed mode requires a power-on current, an average standby leakage current is reduced by a factor of 1000, and the total standby current including both the leakage current and refresh current is reduced by a factor of 10 in a 1 Gb DRAM. The proposed circuit technique was verified by a 64 Kb DRAM test chip. All cell data were successfully maintained after the power source switching. The measured power-off time was as long as the measured data retention time in the conventional DRAM standby mode.
机译：本文提出了一种新的DRAM关机模式，该模式下，在待机周期内电源完全关闭，从而使待机泄漏电流为零。通过引入新的字线断电/通电序列和接地的单元板技术，可以在电源关闭和打开后保留所有单元数据。尽管提出的模式需要上电电流，但是在1 Gb DRAM中，平均待机泄漏电流减少了1000倍，包括泄漏电流和刷新电流的总待机电流减少了10倍。所提出的电路技术已通过64 Kb DRAM测试芯片进行了验证。电源切换后，所有单元数据均已成功维护。在常规DRAM待机模式下，测得的断电时间与测得的数据保留时间一样长。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号