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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A low-power high-gain transresistance BiCMOS pulse amplifier for capacitive detector readout
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A low-power high-gain transresistance BiCMOS pulse amplifier for capacitive detector readout

机译：用于电容式检测器读出的低功率高增益跨阻BiCMOS脉冲放大器

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摘要

A low-power, high-gain amplifier for detector readout is discussed. The amplifier is balanced, fully differential in circuit topology, and symmetrical in layout, making it radiation tolerant and relatively insensitive to varying magnetic fields in the large detector. Before irradiation, the circuit has a measured differential gain of 110 mV/4 fC, an average 10/90% rise time t/sub 10/90%/ of 19 ns, a noise figure of 433/spl oplus/93/spl middot/(C/sub t/)/sup 1.08/ electrons, e/sup -/, and a power consumption of 750 /spl mu/W. To keep the core amplifier stable, a low-power super-low gain-bandwidth (SL-GBW) amplifier with a small area is used and also discussed. The SL-GBW amplified has a transition frequency f/sub T/ of 38 kHz (including the gain stage, A), a power consumption of 150 nW, a phase margin (PM) of /spl ap/70/spl deg/, an area of 300/spl times/36 /spl mu/m/sup 2/, and a minimum current per transistor of 7 nA, which is far above the leakage current after irradiation. The complete circuit was implemented in the radiation hard SOI-SIMOX BiCMOS-PJFET technology of DMILL.
机译：讨论了一种用于检测器读数的低功耗，高增益放大器。放大器是平衡的，电路拓扑完全差分，布局对称，使其耐辐射，并且对大型探测器中变化的磁场相对不敏感。在辐照之前，该电路的测量差分增益为110 mV / 4 fC，平均10/90％的上升时间t / sub 10/90％/为19 ns，噪声系数为433 / spl oplus / 93 / spl middot /（C / sub t /）/ sup 1.08 /电子，e / sup-/，功耗为750 / spl mu / W。为了保持核心放大器稳定，使用了面积小的低功率超低增益带宽（SL-GBW）放大器，并进行了讨论。放大后的SL-GBW的过渡频率f / sub T /为38 kHz（包括增益级A），功耗为150 nW，相位裕度（PM）为/ spl ap / 70 / spl deg /，面积为300 / spl倍/ 36 / spl mu / m / sup 2 /，每个晶体管的最小电流为7 nA，远高于辐照后的泄漏电流。完整电路采用DMILL的抗辐射硬SOI-SIMOX BiCMOS-PJFET技术实现。

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