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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A monolithic gallium arsenide interval timer IC with integrated PLL clock synthesis having 500-ps single shot resolution
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A monolithic gallium arsenide interval timer IC with integrated PLL clock synthesis having 500-ps single shot resolution

机译：具有集成PLL时钟合成功能的单片砷化镓间隔计时器IC，具有500 ps的单脉冲分辨率

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摘要

A gallium arsenide (GaAs) integrated circuit for measuring single shot time intervals with 500-ps resolution has been designed, fabricated, and tested. The circuit contains a 12-b counter that can be extended externally and control circuitry for the detection of multiple intervals. Options such as number of intervals, minimum interval time, and timing resolution are user programmable. The circuit employs a self-contained 2.0-GHz phase-locked loop (PLL) clock synthesizer with less than 5 ps rms jitter and a lock time of 2.5 /spl mu/s. The circuit is packaged in a 14-mm/sup 2/, 52-pin thermally enhanced plastic package and operates from a single +5-V supply. The nominal power dissipation is 2.8 W. The circuit is fabricated in a 0.6-/spl mu/m gate length, enhancement/depletion GaAs MESFET process utilizing four layers of gold interconnect metallization. Inductors, capacitors, and thin film resistors can be fabricated in this process, enabling integrated analog circuitry. The die size is 3.28 by 3.15 mm. The circuit has applications in collision avoidance sensors, laser rangefinders, surveying, police radar, and test instrumentation.
机译：已经设计，制造和测试了用于测量500 ps分辨率的单次发射时间间隔的砷化镓（GaAs）集成电路。该电路包含一个可在外部扩展的12位计数器和用于检测多个间隔的控制电路。间隔数，最小间隔时间和定时分辨率等选项是用户可编程的。该电路采用了一个独立的2.0 GHz锁相环（PLL）时钟合成器，其抖动小于5 ps rms，锁定时间为2.5 / spl mu / s。该电路采用14mm / sup 2 /，52引脚耐热增强塑料封装，并采用+ 5V单电源供电。标称功耗为2.8W。该电路采用0.6- / spl mu / m的栅长，增强/耗尽型GaAs MESFET工艺制造，采用四层金互连金属化工艺。可以在此过程中制造电感器，电容器和薄膜电阻器，从而实现集成模拟电路。模具尺寸为3.28 x 3.15毫米。该电路可用于防撞传感器，激光测距仪，测量，警用雷达和测试仪器中。

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