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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMICs
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Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMICs

机译：高度集成的三维MMIC技术应用于新型Masterslice GaAs和Si-MMIC

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摘要

A novel three-dimensional (3-D) masterslice monolithic microwave integrated circuit (MMIC) is presented that significantly reduces turnaround time and cost for multifunction MMIC production. This MMIC incorporates an artificial ground metal for effective selection of master array elements on the wafer surface, resulting in various MMIC implementations on a master-arrayed footprint in association with thin polyimide and metal layers over it. Additionally, the 3-D miniature circuit components of less than 0.4 mm/sup 2/ in size provide a very high integration level. To clearly show the advantages, a 20-GHz-band receiver MMIC was implemented on a master array with 6/spl times/3 array units including a total of 36 MESFETs in a 1.78/spl times/1.78 mm area. Details of the miniature circuit components and the design, closely related to the fabrication process, are also presented. The receiver MMIC exhibited a 19-dB conversion gain with an associated 6.5-dB noise figure from 17 to 24 GHz and an integration level four times higher than conventional planar MMICs. This technology promises about a 90% cost reduction for MMIC because it can be similarly applied to large-scale Si wafers with the aid of an artificial ground.
机译：提出了一种新颖的三维（3-D）Masterslice单片微波集成电路（MMIC），可显着减少多功能MMIC生产的周转时间和成本。该MMIC结合了人工研磨的金属，可有效选择晶片表面上的母盘阵列元素，从而在母盘阵列覆盖区上实现各种MMIC实施，并结合其上的薄聚酰亚胺和金属层。此外，尺寸小于0.4 mm / sup 2 /的3-D微型电路组件具有很高的集成度。为了清楚地显示其优势，在具有6 / spl次/ 3个阵列单元的主阵列上实施了20 GHz频段的接收器MMIC，包括在1.78 / spl次/1.78毫米面积中的总共36个MESFET。还介绍了与制造过程密切相关的微型电路组件和设计的详细信息。接收器MMIC表现出19 dB的转换增益，以及从17到24 GHz的相关6.5 dB噪声系数，并且集成度是传统平面MMIC的四倍。该技术有望将MMIC的成本降低90％，因为它可以在人工研磨的帮助下类似地应用于大型Si晶片。

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