35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs

Zhihao Lao; Bronner W.

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35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs

机译：采用0.2- / splμ/ m AlGaAs / GaAs-HEMT的35GHz静态和48GHz动态分频器IC

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Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-/spl mu/m gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (f/sub T/=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V.

机译：设计并制造了基于增强和耗尽型0.2- / splμ/ m栅长AlGaAs / GaAs高电子迁移率晶体管（HEMT）（f / sub T / = 60和55 GHz）技术的两个静态和两个动态分频器。静态分频器的高速运行分别达到35 GHz，动态分频器的高速运行达到48 GHz。接地的单端输入和差分输出简化了许多应用。使用两个4和-2.5 V电源电压时，二分频器的功耗为250 mW，四分频器的功耗为350 mW。

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来源
《IEEE Journal of Solid-State Circuits》 |1997年第10期|P.1556-1562|共7页
作者
Zhihao Lao; Bronner W.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
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2. 30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology [J] . Lang M., Berroth M. Electronics Letters . 1995,第24期

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35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs

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