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Low temperature magnetoresistance of Al-doped ZnO films

机译：掺铝ZnO薄膜的低温磁阻

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摘要

The magnetoresistances of aluminum-doped zinc oxide thin films with thickness of 463.63, 203.03, and 66.85 nm were measured at low temperatures from 2.5 to 30 K. It is found that the samples exhibit negative magnetoresistance at all measuring temperatures. However, neither the three-dimensional nor the two-dimensional weak-localization theories can reproduce the behavior of the magnetoresistance. We find that the magnetoresistance of the three films can be well described by a semiempirical expression that takes into account the third order s-d exchange Hamiltonians describing a negative part and a two-band model for the positive contribution. This strongly suggests that the negative magnetoresistance in ZnO: Al film originates from the scattering of conduction electrons due to localized magnetic moments.
机译：在2.5至30 K的低温下测量了厚度为463.63、203.03和66.85 nm的铝掺杂氧化锌薄膜的磁阻。发现样品在所有测量温度下均呈现负磁阻。但是，三维和二维弱定位理论都不能重现磁阻的行为。我们发现，通过考虑到描述负部分的三阶s-d交换哈密顿量和正贡献的两波段模型，可以通过半经验表达式很好地描述三层膜的磁阻。这有力地表明，ZnO：Al膜中的负磁阻起因于局部磁矩引起的导电电子的散射。

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