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Growth of single-walled carbon nanotubes on silicon nanowires

机译:单壁碳纳米管在硅纳米线上的生长

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Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiO_x layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiO_x layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.
机译:单壁碳纳米管(SWNT)已通过含Co催化剂的乙醇化学气相沉积(CVD)在硅纳米线(SiNW)上生长。我们已经发现,SiNWs的表面SiO_x层对于形成活性Co催化剂是必需的。实际上,随着表面SiO_x层的厚度减小,SWNT / SiNW异质结的产率逐渐降低。由于薄的SiNW对电子束是透明的,因此可以通过TEM轻松观察到SiNW上的Co纳米颗粒以及SWNT。因此,已经研究了每个SWNT的直径与其催化剂纳米颗粒之间的关系。 SWNT的直径等于或略小于催化剂纳米颗粒的直径。

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