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首页> 外文期刊>Solid State Communications >Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy
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Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy

机译：通过分子束外延生长在Si上的Ag / Al双层的异常电输运特性

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摘要

We have investigated the temperature dependent electrical resistivity, ρ(T), of Ag(100 nm)/Al(10 nm) bilayers grown on Si(111) and quartz substrates using molecular beam epitaxy (MBE). Bilayers grown on Si exhibited an anomalous negative temperature coefficient of resistivity (TCR) in the temperature range of 140-165 K of the ρ(T) plot. However, at temperatures below and above this negative TCR region, ρ(T) exhibited a characteristic positive TCR of metallic alloys. No such resistive anomaly was observed for the bilayers grown on quartz substrates. The observed resistive anomaly could be qualitatively explained by assuming two parallel conduction channels, that is, one at the interface having high Si content and obeying the polaronic behavior at <165 K and another far away from the interface having almost no Si impurity and thus exhibiting pure metallic behavior down to 4 K. In addition, bilayers exhibited a sharp resistive transition at ～6.5 K, indicating a possibility of a new Ag-Al alloy being a superconducting material.
机译：我们已经研究了使用分子束外延（MBE）在Si（111）和石英基板上生长的Ag（100 nm）/ Al（10 nm）双层银的温度依赖性电阻率ρ（T）。在ρ（T）图的140-165 K的温度范围内，在Si上生长的双层表现出反常的负电阻率温度系数（TCR）。但是，在低于和高于此负TCR区域的温度下，ρ（T）表现出金属合金的特征正TCR。对于在石英衬底上生长的双层没有观察到这种电阻异常。假设两个平行的传导通道，即在高Si含量的界面处且服从<165 K的极化行为，而在远离界面且几乎没有Si杂质的地方，则可以定性地解释观察到的电阻异常。低至4 K的纯金属行为。此外，双层在6.5 K处表现出尖锐的电阻跃迁，这表明新的Ag-Al合金可能是超导材料。

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