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Experimental magnetic study and evidence of the exchange bias effect in unidimensional Co arrays produced by interference lithography

机译：实验磁性研究和干涉光刻在单维Co阵列中产生交换偏置效应的证据

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摘要

A simple process for fabricating submicrometric magnetic arrays employing interference lithography, sputtering deposition and lift-off processes is proposed and demonstrated. The magnetic properties of cobalt (Co) arrays were measured and compared with those of a continuous Co magnetic film. The results show a dependence of the hysteresis curve on the orientation of the field as regards the array, which is correlated with the anisotropy of the structures and a dependence of the coercive field on the periodicity of the arrays. Moreover, an exchange bias effect was observed, which is ascribed to a ferromagnetic/antiferromagnetic (FM/AFM) coupling between Co and a thin surface cobalt oxide (CoO) layer.
机译：提出并证明了采用干涉光刻，溅射沉积和剥离工艺制造亚微米磁性阵列的简单方法。测量钴（Co）阵列的磁性，并将其与连续的Co磁性膜的磁性进行比较。结果表明，磁滞曲线与阵列的场方向有关，这与结构的各向异性以及矫顽场与阵列的周期有关。此外，观察到交换偏压效应，这归因于Co与薄表面氧化钴（CoO）层之间的铁磁/反铁磁（FM / AFM）耦合。

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