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首页> 外文期刊>Solid State Communications >Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (1120) sapphire substrates
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Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (1120) sapphire substrates

机译：在（0001）和（1120）蓝宝石衬底上生长的InGaN发光二极管的光致发光特性

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摘要

The temperature, excitation power and polarization dependence of ultraviolet (UV) photoluminescence (PL) of InGaN/AlGaN light-emitting diodes (LEDs) grown on (0001) and (1120) sapphire substrates were investigated. It appears that the LEDs grown on (1120) sapphire substrates show higher integrated luminescent efficiency than that of the LEDs grown on (0001) sapphire substrates. From the experimental data, it is believed that, for the InGaN LEDs having reduced InN molar fraction in the InGaN well layer, the PL characteristics are determined by the competition between the QW (or QD) radiative recombination, spatially localized radiative recombination and defect-induced nonradiative recombination. According to the results of polarization dependent edge-emitting PL measurements, the LEDs grown on (1120) sapphire substrates were found to exhibit a QW-like behaviour, while the LEDs grown on (0001) sapphire substrates were observed to show a mixed QW/QD-like behaviour. The polarization dependent edge emitting PL measurement is considered to be a highly sensitive technique for the characterization of the nanostructures of InGaN MQW LEDs.
机译：研究了在（0001）和（1120）蓝宝石衬底上生长的InGaN / AlGaN发光二极管（LED）的温度，激发功率和紫外（UV）光致发光（PL）的偏振依赖性。似乎在（1120）蓝宝石衬底上生长的LED的集成发光效率比在（0001）蓝宝石衬底上生长的LED更高。根据实验数据，可以认为，对于InGaN阱层中InN摩尔分数降低的InGaN LED，其PL特性取决于QW（或QD）辐射复合，空间局部辐射复合与缺陷之间的竞争。诱导的非辐射重组。根据偏振相关的边缘发射PL测量结果，发现在（1120）蓝宝石衬底上生长的LED表现出类似QW的行为，而观察到（0001）蓝宝石衬底上生长的LED表现出混合的QW /类似于QD的行为。偏振相关边缘发射PL测量被认为是表征InGaN MQW LED纳米结构的高度灵敏技术。

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