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Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

机译：Siδ掺杂InAlAs / InGaAs / InAlAs单量子阱中的伪纺丝

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摘要

Magneto-transport measurements have been carried out on double/single-barrier-doped In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.
机译：在1.5的双/单势垒In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）As量子阱样品上进行了磁传输测量在高达13 T的施加磁场中达到60K。对于对称的双势垒掺杂样品，观察到Beating Shubnikov-de Haas振荡，并且由于对称状态和反对称状态被限制在两个耦合的自洽势阱中而得到证明在单量子阱中。从实验数据中提取了双势垒掺杂样品的对称和反对称状态之间的能量分离，这与计算结果一致。对于单势垒掺杂样品，仅显示与子带间磁散射有关的跳动。对称双势垒掺杂单量子阱的pesudospin特性表明，它是制造量子晶体管的良好候选者。

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