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Fabrication and properties of PLT/PLZT/PLT structures obtained by RF magnetron sputtering

机译：射频磁控溅射法制备PLT / PLZT / PLT结构及其性能

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摘要

Ferroelectric Pb_(0.84)La_(0.16)Ti_(0.96)O_3/Pb_(0.96)La_(0.04)(Zr_(0.52)Ti_(0.48))_(0.99)O_3/Pb_(0.84)La_(0.16)Ti_(0.96)O_3 (PLT/PLZT/PLT) structures were fabricated on platinum-coated silicon wafers by RF magnetron sputtering. A Pb_(0.84)La_(0.16)Ti_(0.96)O_3 layer was used as a seed layer to improve the crystallization and enhance the ferroelectric properties of the PLZT film. With the PLT seed layers, the films showed excellent ferroelectric properties in terms of large remnant polarization (2P_r) of 52.7 μC/cm~2, lower coercive field (2E_c) of 130 kV/cm for an applied field of 500 kV/cm. Moreover, the PLT/PLZT/PLT structures exhibited good fatigue endurance after 10~(10) switching cycles, which was attributed to the double-sided PLT layers. They improved the electrical fatigue by eliminating the pyrochlore phase, reduced the strong (111) orientation, and assimilated the oxygen vacancies from the PLZT layer.
机译：铁电体Pb_（0.84）La_（0.16）Ti_（0.96）O_3 / Pb_（0.96）La_（0.04）（Zr_（0.52）Ti_（0.48））_（0.99）O_3 / Pb_（0.84）La_（0.16）Ti_（0.96）通过射频磁控溅射在覆铂的硅片上制备了O_3（PLT / PLZT / PLT）结构。 Pb_（0.84）La_（0.16）Ti_（0.96）O_3层用作种子层，以改善结晶和增强PLZT膜的铁电性能。在PLT种子层的情况下，薄膜在52.7μC/ cm〜2的大剩余极化（2P_r），在500 kV / cm的施加电场下具有130 kV / cm的较低矫顽场（2E_c）方面显示出优异的铁电性能。此外，PLT / PLZT / PLT结构在10〜（10）个开关周期后表现出良好的疲劳耐久性，这归因于双面PLT层。他们消除了烧绿石相，降低了强（111）取向，并吸收了PLZT层中的氧空位，从而改善了电疲劳。

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