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首页> 外文期刊>Solid State Communications >Field emission studies of nanostructured c-axis oriented GaN film on SiO_x/Si(100) by pulsed laser deposition
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Field emission studies of nanostructured c-axis oriented GaN film on SiO_x/Si(100) by pulsed laser deposition

机译：通过脉冲激光沉积在SiO_x / Si（100）上纳米结构c轴取向GaN膜的场发射研究

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摘要

GaN films with orientation along c-axis were deposited on SiO_xSi(100) substrates using pulsed laser deposition (PLD). Formation of nanostructures of GaN was confirmed using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. The field electron emission (FE) from the specimen was obtained using a diode configuration and the current-voltage (I-V) characteristics were studied. Linear nature of the Fowler-Nordheim (FN) plot indicates that the electron emission is due to the FN tunneling process. High field enhancement factor β (28 756) suggests that the field enhancement is due to the nanometric needle-like structures present in the film surface, acting as emitters. The field emission current-time (I-t) records were obtained at the preset current density of 0.4 μA/cm~2 and 2.0 μA/cm~2 for 2.5 h. The fluctuations about the average preset current densities were observed to be 20% and 50% for higher and lower current densities respectively.
机译：使用脉冲激光沉积（PLD）将具有沿c轴定向的GaN膜沉积在SiO_xSi（100）衬底上。使用X射线衍射（XRD）和原子力显微镜（AFM）技术确认了GaN纳米结构的形成。使用二极管配置获得了样品的场电子发射（FE），并研究了电流-电压（I-V）特性。 Fowler-Nordheim（FN）图的线性性质表明，电子发射是由于FN隧穿过程引起的。高场增强因子β（28 756）表明场增强是由于存在于薄膜表面的纳米针状结构（充当发射器）所致。在预设的电流密度分别为0.4μA/ cm〜2和2.0μA/ cm〜2的条件下持续2.5 h获得场发射电流-时间（I-t）记录。对于较高和较低的电流密度，观察到平均平均电流密度的波动分别为20％和50％。

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