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Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

机译：InN在几乎晶格匹配的（Mn，Zn）Fe2O4上的外延生长

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摘要

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe2O4 0 11) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 degrees C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe2O4, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 degrees C with the ideal in-plane epitaxial relationship of [11-20] InN//[11-2](Mn,Zn)Fe2O4, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 degrees C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe2O4 (I 11) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN. (c) 2005 Elsevier Ltd. All rights reserved.
机译：我们在低温下通过脉冲激光沉积（PLD）在几乎晶格匹配（Mn，Zn）Fe2O4 0 11）的衬底上生长了InN膜，并研究了其结构特性。在高于400摄氏度的衬底温度下生长的InN薄膜显示出较差的结晶度，并且其面内外延关系为[10-10] InN // [11-2]（Mn，Zn）Fe2O4，这意味着它们的晶格失配非常明显大（11％）。相比之下，可以在低于150摄氏度的生长温度下生长具有平坦表面的高质量InN膜，并具有理想的面内外延关系：[11-20] InN // [11-2]（Mn，Zn）Fe2O4，产生的晶格失配率低至2.0％。 X射线反射率测量表明，当生长温度从400℃降低到室温时，InN和衬底之间的界面层的厚度从14nm降低到8.4nm。通过降低生长温度来抑制界面反应可能是导致结晶质量提高的原因。这些结果表明，在低生长温度下使用（Mn，Zn）Fe2O4（I 11）衬底可以使我们实现InN的近晶格匹配外延生长。 （c）2005 Elsevier Ltd.保留所有权利。

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